TLP801A 2002-09-25 1 toshiba photo ? interrupter infrared led+phototransistor TLP801A optical switches position and rotation detection position detection in fdds(floppy disk drives) timing detection in copiers, printers, fax machines, etc. the TLP801A photo ? interrupter can be used for high-speed position detection. gap: 3mm resolution: slit width = 1mm fast response speed: t r , t f = 6s(typ.) high current transfer ratio: i c / i f = 10%(min) designed for direct mounting on printed circuit boards package material: polycarbonate maximum ratings (ta = 25c) characteristic symbol rating unit forward current i f 50 ma forward current derating (ta > 25c) ? i f / c 0.33 ma / c led reverse voltage v r 5 v collector emitter voltage v ceo 30 v emittercollector voltage v eco 5 v collector power dissipation p c 75 mw collector power dissipation derating(ta > 25c) ? p c / c 1 mw / c detector collector current i c 50 ma operating temperature range t opr 25~85 c storage temperature range t stg 40~100 c toshiba 11 ? 13d2 weight: 0.78g(typ.)
TLP801A 2002-09-25 2 markings optical and electrical characteristics (ta = 25c) characteristic symbol test condition min typ. max unit forward voltage v f i f = 10ma 1.00 1.15 1.30 v reverse current i r v r = 5v D D 10 a led peak emission wavelength p i f = 20ma D 940 D nm dark current i d (i ceo ) v ce = 24v, i f = 0 D D 0.1 a detector peak sensitivity wavelength p D 820 D nm current transfer ratio i c / i f v ce = 5v, i f = 20ma 10 D 165 % collector emitter saturation voltage v ce(sat) i f = 20ma, i c = 1ma D 0.15 0.4 v rise time t r D 6 D coupled fall time t f v cc = 5v, i c = 2ma, r l = 100 ? D 6 D s monthly lot number product number year of manufacture month of manufacture ( januar y to decembe r denoted b y letters a to l res p ectivel y) last digit of year of manufactur letter color: silver p801a
TLP801A 2002-09-25 3 precautions the following points must be borne in mind. 1. soldering temperature: 260c max soldering time: 5s max (soldering must be performed 1.5mm under the package body.) 2. clean only the soldered part of the leads. do not immerse the entire package in the cleaning solvent. 3. mount the device on a level surface. 4. screws should be tightened to a clamping torque of 0.59 n ? m. 5. the package is made of polycarbonate. polycarbonate is usually stable with acid, alcohol and aliphatic hydrocarbons, however, with petrochemicals (such as benzene, toluene and acetone), alkalis, aromatic hydrocarbons, or chloric hydrocarbons, polycarbonate may crack, swell or melt. please take this into account when chosing a packaging material by refering to the table below. phenomenon chemicals a staining and slight deterioration ? nitric acid (diluted), hydrogen peroxide, chlorine b cracking, crazed or swelling ? acetic acid (70% or more) ? gasoline ? methyl ethyl ketone, ethyl acetate, butyl acetate ? ethyl methacrylate, ethyl ether, mek ? acetone, m amino alcohol, carbon tetrachloride ? carbon disulfide, trichloroethylene, cresol ? thinners,oil of turpentine ? triethanolamine, tcp, tbp c melting ( ): used as solvent ? concentrated sulfuric acid ? benzene ? styrene, acrylonitrile, vinyl acetate ? ethylenediamine, diethylenediamine ? (chloroform, methyl chloride, tetrachloromethane,dioxane, 1, 2 dichloroethane) d decomposition ? ammonia water ? other alkalis 6. conversion efficiency falls over time due to current which flows in the infrared led. when designing a circuit, take into account this change in conversion efficiency over time. the ratio of fluctuation in conversion efficiency to fluctuation in infrared led optical output is 1 : 1. (0) o p (t) o p (0) f /i c i (t) f i / c i
TLP801A 2002-09-25 4 package dimensions weight: 0.78g(typ.) pin connection 1. anode 2. cathode 3. collector 4. emitter 1 2 3 4
TLP801A 2002-09-25 5 i f ? ta ambient temperature ta (c) allowable forward current i f (ma) 80 0 0 60 40 20 20 40 60 80 100 p c ? ta ambient temperature ta (c) allowable collector power dissipation p c (mw) 80 0 60 40 20 0 20 40 60 80 100 forward current i f (ma) collector current i c (ma) ta = 2 5 c 10 20 0.1 1 5 3 1 0.5 0.3 3 10 30 100 v ce = 5v 0.4 i c ? i f (typ.) forward voltage v f (v) forward current i f (ma) 100 1 0.8 0.9 1.0 1.1 1.2 1.3 1.4 50 30 10 5 3 ta = 75 c 50 25 0 ? 25 i f ? v f (typ.) 100 3 1 50 30 10 5 30 100 10 3 forward current i f (ma) current transfer ratio i c / i f (%) ta = 25c v ce = 5v 0.4 i c / i f ? i f (typ.) 16 0 0 14 12 10 8 6 4 2 8 6 4 2 10 12 14 16 collector-emitter voltage v ce (v) collector current i c (ma) ta = 25c i c ? v ce (typ.) 36 32 28 24 20 16 p c max 12 8 i f = 4ma
TLP801A 2002-09-25 6 i d (i ceo ) ? ta (typ.) ambient temperature ta (c) dark current i d (i ceo ) (a) 10 - 4 10 10 - 3 100 20 40 60 80 1 10 - 1 10 - 2 0 v ce = 24v 10 5 v ce(sat) ? ta (typ.) ambient temperature ta (c) collector-emitter saturation voltage v ce(sat) (v) 0.32 0.28 ? 40 0.24 0.20 0.16 0.12 0.08 0.04 0 ? 20 0 20 40 60 80 100 i f = 20ma i c = 1ma 24 0 0 20 16 12 8 4 1 2 3 4 5 40 i c ? v ce (typ.) collector-emitter voltage v ce (v) collector current i c (ma) p c max 50 45 35 30 25 20 1 5 10 i f = 5m a ta=25c relative i c ? ta (tyg.) ambient temperature ta (c) relative collector current 1.4 0 - 40 1.2 1.0 0.6 0.4 0.2 0.8 - 20 0 20 40 60 80 100 1.6 v ce = 0.4v 5 i f = 20ma
TLP801A 2002-09-25 7 1 0.1 300 100 50 30 10 5 3 0.3 1 3 10 t s switching characteristics non saturated operation typ. load resistance r l (k ? ) switching time (s) ta = 25c repetitive frequency = 1khz duty = 1 / 2 t d t f t r , i f v cc = 5v v out = 3v r l detection position characteristics (1) typ. distance d (mm) relative collector current i f = 20ma v ce = 5v ta = 25c + 0 d shut -ter ? 1.0 0 ? 3 0.8 0.6 0.4 0.2 ? 2 ? 1 0 1 2 3 4 switching characteristics saturated operation typ. load resistance r l (k ? ) switching time (s) i f v cc = 5v v out 4.6v r l 1000 1 1 10 30 50 300 500 5 3 3 10 30 100 100 t f t s t d detection position characteristics (2) typ. distance d (mm) relative collector current i f = 20ma v ce = 5v ta = 2 5 c 1.0 0 4 5 6 7 8 9 10 11 0.8 0.6 0.4 0.2 shutter d t d 3v i f v out t r t s t f 0v 90% 10% 500 t d i f v out t r t s t f 90% 10% 0v t r
TLP801A 2002-09-25 8 relative positioning of shutter and device for normal operation position the shutter and the device as shown in the figure below. by considering the device?s detection direction characteristic and switching time, determine the shutter slit width and pitch. unit in mm center of sensor 8min 5.5max 6.85 cross section between a and a? shutter a a
TLP801A 2002-09-25 9 toshiba is continually working to improve the quality and reliability of its products. nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. it is the responsibility of the buyer, when utilizing toshiba products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such toshiba products could cause loss of human life, bodily injury or damage to property. in developing your designs, please ensure that toshiba products are used within specified operating ranges as set forth in the most recent toshiba products specifications. also, please keep in mind the precautions and conditions set forth in the ?handling guide for semiconductor devices,? or ?toshiba semiconductor reliability handbook? etc.. the toshiba products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). these toshiba products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (?unintended usage?). unintended usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. unintended usage of toshiba products listed in this document shall be made at the customer?s own risk. gallium arsenide (gaas) is a substance used in the products described in this document. gaas dust and fumes are toxic. do not break, cut or pulverize the product, or use chemicals to dissolve them. when disposing of the products, follow the appropriate regulations. do not dispose of the products with other industrial waste or with domestic garbage. the information contained herein is presented only as a guide for the applications of our products. no responsibility is assumed by toshiba corporation for any infringements of intellectual property or other rights of the third parties which may result from its use. no license is granted by implication or otherwise under any intellectual property or other rights of toshiba corporation or others. the information contained herein is subject to change without notice. 000707eac restrictions on product use
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